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Ceramic pressure sensors are typically based on a piezo-resisitive Wheatstone bridge screen printed onto a ceramic membrane, this membrane can then be hermetically seald to a ceramic body or form part of a moulded body for lower production costs.  The 2-part assembly enables gauge, sealed gauge and absolute references and ranges to be achieved.  The moulded body version (monolithic) is only avaialble in gauge reference as there is no cavity to pull a vacuum against and seal in a absolute zero reference.  Pressurer anges from 500mbar through to 700 bar are possible with this technology with varying degrees of accuracy, compensation and with the addition of electronics, a variety of output types are possibel including current 4-20mA, voltage 0.5 to 4.5V dc ratiometric and 0 - 10V!

ME501 - 18mm Ceramic Pressure Sensor - Low range

18mm diameter ceramic pressure sensor based on a piezo-resistive wheatstone bridge, 0.5 bar through to 100 Bar in gauge, sealed gauge or absolute reference.  Flush diaphragm by design, vacuum resistant.

ME505 - 18mm Ceramic Pressure Sensor - High range

18mm diameter ceramic pressure sensor based on a piezo-resistive wheatstone bridge, 100 bar through to 600 Bar in gauge, sealed gauge or absolute reference.  Flush diaphragm by design, vacuum resistant.

ME506 - 15mm Ceramic Pressure Sensor

15mm diameter ceramic pressure sensor based on a piezo-resistive wheatstone bridge, 1 bar through to 20 Bar in gauge, sealed gauge or absolute reference.

ME651 - 18mm Monolithic Ceramic Pressure Sensor

18mm diameter monolith ceramic pressure sensor based on a piezo-resistive wheatstone bridge, 2 bar through to 400 Bar in gauge only reference.

ME662 - Ceramic pressure sensor, PCB mountable

18mm diameter monolith ceramic pressure sensor based on a piezo-resistive wheatstone bridge, 2 bar through to 400 Bar in gauge only reference.

ME667 - Ceramic sensor & NTC temperature sensor

The ME667 is the same sensor as the ME651 but with an integrated NTC temperature sensor on the back of the diaphragm which the output can be measured from. Pressure ranges from 2 bar through to 400 bar, gauge pressure only.

ME705 - Ceramic Pressure Sensor, Ratiometric Output

18mm diameter monolith ceramic pressure sensor based on a piezo-resistive wheatstone bridge, 2 bar through to 400 Bar in gauge only reference.

ME707 - Monolith Ceramic Sensor, Ratiometric Output

The ME707 is the same as the ME705 but is a monolithic pressure sensor moulded from a single piece of ceramic which offers cost benefits but only available in Gauge reference.  Pressure ranges from 2 bar through to 400 bar and 0.5 to 4.5V dc output from a 5V dc supply.

ME751 - Monolith pressure sensor, ASIC signal conditioning

The ME751 is based on the same principle as the ME705 but uses a ASIC microprocessor to signal conditioning the sensor to provide a ratiometric 0.5 to 4.5V dc output.  This offers benefits when calibrating and compensating and threfore reduces cost and increases stability.

ME752 - Monolith pressure sensor, ASIC signal conditioning

This is the same sensor and electronics as the ME751 but with a 4 - 20mA / 2-wire output signal.  The pressure ranges are from 2 bar through to 400 bar and are very stable and repeatable due to the output type and ASIC based microprocessor.

ME771 - Flush diaphragm, 4-20mA signal conditioning

The ME771 is a flush membrane pressure sensor with integrated digital electronics.  The pressure sensor and combined electronics means that a 4-20mA analogue signal can be achieved over the desired pressure range.

ME772 - Flush diaphragm, 0-10V signal conditioning

The ME772 is a flush membrane pressure sensor with integrated digital electronics.  The pressure sensor and combined electronics means that a 0-10V analogue signal can be achieved over the desired pressure range.

MEM0780 - Flush Membrane cermic sensor with integrated ASIC signal conditioning

The MEM0780 is the latest development which incorporates the silicon chip microprocessor directly on the back of the sensor, this benefits the device as the internal temperature sensor of the chip is closely located to the media temperature and therefore the sensors can be charecterised far more accurately.  The direct location of the electronics also means that the overall envelope is much smaller.